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  publication number s29al008d_kgd_sp revision a amendment 6 issue date february 27, 2009 this product has been retired and is not recommended for designs . please contact your spansion representative for alternates. availability of this document is retained for reference and historical purposes only. distinctive characteristics ? single power supply operation ? 2.7v to 3.6v for read, program, and erase operations ? manufactured on 0.20m process technology ? high performance ? access times as fast as 70 ns ? ultra low power consumption (typical values at 5 mhz) ? 200 na automatic sleep mode current ? 200 na standby mode current ? 7 ma read current ? 15 ma program/erase current ? flexible sector architecture ? one 16 kbyte, two 8 kbyte, one 32 kbyte, and fifteen 64 kbyte sectors (byte mode) ? one 8 kword, two 4 kword, one 16 kword, and fifteen 32 kword sectors (word mode) ? supports full chip erase ? sector protection features: ? a hardware method of locking a sector to prevent any program or erase operations within that sector ? sectors can be locked in-system or via programming equipment ? temporary sector unprotect feature allows code changes in previously locked sectors ? unlock bypass program command ? reduces overall programming time when issuing multiple program command sequences ? top or bottom boot block configurations available ? embedded algorithms ? embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors ? embedded program algorithm automatically writes and verifies data at specified addresses ? minimum one million write cycle guarantee per sector ? compatibility with jedec standards ? pinout and software compatible with single-power supply flash ? superior inadvertent write protection ? data# polling and toggle bits ? provides a software method of detecting program or erase operation completion ? ready/busy# pin (ry/by#) ? provides a hardware method of detecting program or erase cycle completion ? erase suspend/erase resume ? suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ? hardware reset pin (reset#) ? hardware method to reset the device to reading array data ? 20-year data retention at 125c ? reliable operation for the life of the system ? tested to data sheet specifications at temperature ? quality and reliability levels equivalent to standard packaged components s29al008d known good die 8 megabit (1 m x 8-bit/512 k x 16-bit) cmos 3.0 volt-only, boot sector flash memory supplement
2 s29al008d known good die s29al008d_kgd_sp_a6 february 27, 2009 supplement 1. general description the s29al008d in known good die (kgd) form is an 8 mbit, 3.0 volt-only flash memory. spansion defines kgd as standard product in die form, tested for f unctionality and speed. spansio n kgd products have the same reliability and quality as spans ion products in packaged form. 1.1 s29al008d features the s29al008d is an 8 mbit, 3.0 volt-only flash memory organized as 1,048,576 bytes or 524,288 words. the word-wide data (x16) appears on dq15?dq0; th e byte-wide (x8) data appears on dq7?dq0. to eliminate bus contention, the device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. the device requires only a single 3.0 volt power supply for both read and write functions. internally generated and regulated voltages are provided for the program and erase operations. no v pp is required for program or erase operations. the device can also be programmed in standard eprom programmers. the device is entirely command set compatible with the jedec single-power-s upply flash standard . commands are written to the command register usin g standard microprocessor write timings. register contents serve as input to an internal state-machine that controls the erase and programming circuitry. write cycles also internally latch addresses and data n eeded for the programming and erase operations. reading data out of the device is similar to re ading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithm?an internal algorithm that automati cally times the program pulse widths and verifies proper cell margin. the unlock bypass mode facilitates faster programming times by requiring only two write cycles to program dat a instead of four. device erasure occurs by executing the er ase command sequence. this initiates the embedded erase algorithm?an internal algorithm that automatically prepr ograms the array (if it is not already programmed) before executing the erase op eration. during erase, the device au tomatically times the erase pulse widths and verifies proper cell margin. the host system can detect wh ether a program or erase operation is co mplete by observing the ry/by# pin, or by reading the dq7 (data# polling) and dq6 (toggle) status bits . after a program or erase cycle is completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write operations during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of t he sectors of memory. this can be ac hieved in-system or via programming equipment. the erase suspend feature enables the user to put erase on hold fo r any period of time to read data from, or program data to, any sector that is not selected fo r erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the reset# pin may be tied to the system reset circuitr y. a system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the flash memory. the device offers two power-saving features. when addresse s are stable for a specified amount of time, the device enters the automatic sleep mode . the system can also place the device into the standby mode . power consumption is greatly reduced in both these modes. spansion?s flash technology combines years of flas h memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. the device electrically erases all bits within a sector simultaneously via fowler-nordheim tunneling. the data is programmed using hot electron injection. 1.2 electrical specifications refer to the s29al008d data sheet, publication number s2 9al008d_00, for full electr ical specifications on the s29al008d in kgd form.
february 27, 2009 s29al008d_kgd_sp_a6 s29al008d known good die 3 supplement 2. product selector guide 3. die photograph & pad locations family part number s29al008d kgd speed option (v cc = 2.7v ? 3.6v) 70 90 max access time, t acc (ns) 70 90 max ce# access, t ce (ns) 70 90 max oe# access, t oe (ns) 30 35 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 43 44 42 29 30 31 32 28 27 26 25 37 38 39 40 41 36 35 34 33 24 23 22 21 note: wirebond must be 100% within bond pad opening.
4 s29al008d known good die s29al008d_kgd_sp_a6 february 27, 2009 supplement 4. pad description note the coordinates above are relative to the die cent er and can be used to operate wire bonding equipment. table 4.1 pads relative to die center pad no. signal pad center (mils) pad center (millimeters) x y x y 1 a15 71.110 52.729 1.806 1.339 2 a14 66.008 52.729 1.677 1.339 3 a13 60.905 52.729 1.547 1.339 4 a12 55.803 52.729 1.417 1.339 5 a11 50.700 52.729 1.288 1.339 6 a10 45.598 52.729 1.158 1.339 7 a9 40.496 52.729 1.029 1.339 8 a8 35.393 52.729 0.899 1.339 9 we# 25.189 52.729 0.640 1.339 10 reset# 20.086 52.729 0.510 1.339 11 ry/by# -19.245 52.729 -0.489 1.339 12 a18 -29.450 52.729 -0.748 1.339 13 a17 -34.553 52.729 -0.878 1.339 14 a7 -39.655 52.729 -1.007 1.339 15 a6 -44.757 52.729 -1.137 1.339 16 a5 -49.860 52.729 -1.266 1.339 17 a4 -54.962 52.729 -1.396 1.339 18 a3 -60.064 52.729 -1.526 1.339 19 a2 -65.167 52.729 -1.655 1.339 20 a1 -70.269 52.729 -1.785 1.339 21 a0 -70.467 -52.707 -1.790 -1.339 22 ce# -65.365 -52.707 -1.660 -1.339 23 vss -60.261 -52.707 -1.531 -1.339 24 oe# -51.071 -52.707 -1.297 -1.339 25 dq0 -44.610 -52.502 -1.133 -1.334 26 dq8 -39.196 -52.502 -0.996 -1.334 27 dq1 -33.792 -52.502 -0.858 -1.334 28 dq9 -28.378 -52.502 -0.721 -1.334 29 dq2 -22.965 -52.502 -0.583 -1.334 30 dq10 -17.551 -52.502 -0.446 -1.334 31 dq3 -12.146 -52.502 -0.309 -1.334 32 dq11 -6.732 -52.502 -0.171 -1.334 33 vcc 0.649 -52.502 0.017 -1.334 34 dq4 11.644 -52.502 0.296 -1.334 35 dq12 17.058 -52.502 0.433 -1.334 36 dq5 22.462 -52.502 0.571 -1.334 37 dq13 27.876 -52.502 0.708 -1.334 38 dq6 33.289 -52.502 0.846 -1.334 39 dq14 38.703 -52.502 0.983 -1.334 40 dq7 44.108 -52.502 1.120 -1.334 41 dq15/a-1 49.522 -52.502 1.258 -1.334 42 vss 59.721 -52.707 1.517 -1.339 43 byte# 64.913 -52.707 1.649 -1.339 44 a16 70.016 -52.707 1.778 -1.339
february 27, 2009 s29al008d_kgd_sp_a6 s29al008d known good die 5 supplement note the coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment. table 4.2 pads relative to v cc pad no. signal pad center (mils) pad center (millimeters) x y x y 1 a15 70.460 105.231 1.790 2.673 2 a14 65.358 105.231 1.660 2.673 3 a13 60.256 105.231 1.531 2.673 4 a12 55.153 105.231 1.401 2.673 5 a11 50.051 105.231 1.271 2.673 6 a10 44.949 105.231 1.142 2.673 7 a9 39.846 105.231 1.012 2.673 8 a8 34.744 105.231 0.883 2.673 9 we# 24.539 105.231 0.623 2.673 10 reset# 19.437 105.231 0.494 2.673 11 ry/by# -19.895 105.231 -0.505 2.673 12 a18 -30.100 105.231 -0.765 2.673 13 a17 -35.202 105.231 -0.894 2.673 14 a7 -40.304 105.231 -1.024 2.673 15 a6 -45.407 105.231 -1.153 2.673 16 a5 -50.509 105.231 -1.283 2.673 17 a4 -55.612 105.231 -1.413 2.673 18 a3 -60.714 105.231 -1.542 2.673 19 a2 -65.816 105.231 -1.672 2.673 20 a1 -70.919 105.231 -1.801 2.673 21 a0 -71.117 -0.206 -1.806 -0.005 22 ce# -66.014 -0.206 -1.677 -0.005 23 v ss -60.910 -0.206 -1.547 -0.005 24 oe# -51.721 -0.206 -1.314 -0.005 25 dq0 -45.260 0.000 -1.150 0.000 26 dq8 -39.846 0.000 -1.012 0.000 27 dq1 -34.441 0.000 -0.875 0.000 28 dq9 -29.027 0.000 -0.737 0.000 29 dq2 -23.614 0.000 -0.600 0.000 30 dq10 -18.200 0.000 -0.462 0.000 31 dq3 -12.796 0.000 -0.325 0.000 32 dq11 -7.381 0.000 -0.187 0.000 33 v cc 0.000 0.000 0.000 0.000 34 dq4 10.994 0.000 0.279 0.000 35 dq12 16.408 0.000 0.417 0.000 36 dq5 21.813 0.000 0.554 0.000 37 dq13 27.227 0.000 0.692 0.000 38 dq6 32.640 0.000 0.829 0.000 39 dq14 38.054 0.000 0.967 0.000 40 dq7 43.458 0.000 1.104 0.000 41 dq15/a-1 48.872 0.000 1.241 0.000 42 v ss 59.072 -0.206 1.500 -0.005 43 byte# 64.264 -0.206 1.632 -0.005 44 a16 69.367 -0.206 1.762 -0.005
6 s29al008d known good die s29al008d_kgd_sp_a6 february 27, 2009 supplement 5. ordering information this product has been retired and is not recommend ed for designs. please contact your spansion representative for alternates. avail ability of this document is retained for reference and historical purposes only. 5.1 standard products spansion standard products are available in several packages and operating ranges. the order number (valid combination) is formed by a combination of the elements below. valid combinations valid combinations list configurations planned to be su pported in volume for this device. consult the local spansion sales office to confirm availability of specif ic valid combinations and to check on newly released combinations. s29al008d 70 w h i 01 i device carrier 4 = die in surftape? (tape and reel) 2500 per 7 inch reel 7 = die in waffle pack 140 die per 5 tray stack 9 = wafer in wafer jar model number 01 = v cc = 2.7 - 3.6v, top boot sector device 02 = v cc = 2.7 - 3.6v, bottom boot sector device temperature range i = industrial (-40 o c to +85 o c) v = automotive - in cabin (-40 o c to +105 o c) die/wafer option h = 280 m thickness without polyimide g = 500 m thickness without polyimide package type d = die with kgd test flow w = wafer with kgd test flow speed option 70 = 70 ns access speed 90 = 90 ns access speed device number/description s29al008d valid combinations device number speed option package type, and temperature range model number die revision s29al008d 70, 90 dhi, dgi, dhv, dgv 01, 02 4, 7 whi, wgi, whv, wgv 9
february 27, 2009 s29al008d_kgd_sp_a6 s29al008d known good die 7 supplement 6. packaging information 6.1 surftape packaging 6.2 waffle pack packaging direction of feed orientation relative to leading edge of tape and reel 16 mm orientation relative to top left corner of waffle pack cavity plate
8 s29al008d known good die s29al008d_kgd_sp_a6 february 27, 2009 supplement 7. product test flow figure 7.1 provides an overview of spansion?s known good die test flow. for more detailed information, refer to the s29al008d product qualification database su pplement for kgd. spansion implements quality assurance procedures throughout the product test flow . in addition, an off-line quality monitoring program (qmp) further guarantees spansion quality standard s are met on known good die products. these qa procedures also allow spansion to produce kgd pr oducts without requiring or implementing burn-in. figure 7.1 spansion kgd product test flow wafer sort 1 bake 24 hours at 250 c wafer sort 2 wafer sort 3 high temperature packaging for shipment shipment dc parameters functionality programmability erasability data retention dc parameters functionality programmability erasability dc parameters functionality programmability erasability speed incoming inspection wafer saw die separation 100% visual inspection die pack
february 27, 2009 s29al008d_kgd_sp_a6 s29al008d known good die 9 supplement 8. physical specifications die dimensions ........................................................................................................ 153.54 m ils x 120.08 mils .................................................................................................................... 3.9 mm x 3. 05 mm die thickness .......................................................................................................... 500 m bond pad size ......................................................................................................... 3.19 mil s x 3.19 mils .................................................................................................................... 81 m x 81 m pad area free of passivation .................................................................................. 10.18 mils 2 .................................................................................................................... 6,561 m 2 pads per die ............................................................................................................ 44 bond pad metalization ............................................................................................. al/cu die backside .......... .............. .............. .............. .............. .............. .............. .............. no met al passivation................................................................................................................ nitr ide/sog/nitride 9. dc operating conditions v cc (supply voltage) ................................................................................................ 2.7 v to 3.6 v operating temperature commercial ................................................................................................ 0c to +70c industrial .............. .............. .............. .............. .............. .............. .............. ... ?40c to +85c automotive in cabin .... .............. .............. .............. .............. ........... ............ ?40c to +105c 10. manufacturing information manufacturing ........... .............. .............. .............. .............. .............. .............. ........... spansio n test ......................................................................................................................... p enang, malaysia manufacturing id (top boot)...... .............. .............. .............. .............. ........... ........... 98h19ak (bottom boot)................................................................................ 98h19abk preparation for shipment ...... .............. .............. .............. .............. .............. ............. penang, malay sia fabrication process ................................................................................................. cs49ss die revision ............................................................................................................ 1 11. special handling instructions 11.1 processing do not expose kgd products to ultraviolet light or proc ess them at temperatures greater than 250c. failure to adhere to these handling instruct ions will result in irreparable damage to the devices. for best yield, spansion recommends assembly in a class 10k clean room with 30% to 60% relative humidity. 11.2 storage store at a maximum temperature of 30c in a nitr ogen-purged cabinet or vacu um-sealed bag. observe all standard esd handling procedures.
10 s29al008d known good die s29al008d_kgd_sp_a6 february 27, 2009 supplement 12. terms and conditions of sale fo r spansion non-volatile memory die all transactions relating to unpackaged die under th is agreement shall be subject to spansion?s standard terms and conditions of sale, or any revisions thereof, which revisions spansion reserves the right to make at any time and from time to time. in the event of conf lict between the provisions of spansion?s standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. spansion warrants its manufactured unpackaged die whether shipped to customer in individual dice or wafer form (?known good die,? ?kgd?, ?die,? ?known good wafer?, ?kgw?, or wafe r(s)) will meet spansion's published specifications and against defective materials or workmans hip for a period of one (1) year from date of shipment. this limited warranty does not extend beyond th e first purchaser of said die or wafer(s). buyer assumes full responsibility to ensure compliance with the appropriate handling, assembly and processing of kgd or kgw (including but not limited to proper die preparation, die attach, backgrinding, singulation, wire bonding and related assembly and te st activities), and compliance with all guidelines set forth in spansion's specifications for kgd or kgw, and spansion assumes no responsibility for environmental effects on kgd or kgw or for any activity of buyer or a third party that damages the die or wafer(s) due to improper use, abuse, negligence, im proper installation, improper backgrinding, improper singulation, accident, loss, damage in transit, or unaut horized repair or alteration by a person or entity other than spansion (?limited warranty exclusions?) the liability of spansion under this lim ited warranty is limited, at spansion's option, solely to repair the die or wafer(s), to send replacement die or wafer(s), or to make an appropriate credit adjustment or refund in an amount not to exceed the original purchase price actually paid for the die or wafer(s) returned to spansion, provided that: (a) spansion is promptly notified by buyer in writing during the applicable warranty period of any defect or nonconformity in the die or wafer(s); (b ) buyer obtains authorization from spansion to return the defective die or wafer(s); (c) the defective die or wafer(s) is returned to spansion by buyer in accordance with spansion's shipping instructions se t forth below; and (d) buyer shows to spansion's satisfaction that such alleged defect or nonconformity actually exists and was not caused by any of the above-referenced warranty exclusions. buyer shall ship such defective die or wafer(s) to spansion via spansion's carrier, collect. risk of loss will transfer to spansion when the defective die or wafer(s) is provided to spansion's carrier. if buyer fails to adhere to these warranty returns guidelines, buyer shall assume all risk of loss and shall pay for all freight to spansion's specified lo cation. the aforementioned provisions do not extend the original limited warranty period of any die or wafer(s) that has either been replaced by spansion. this limited warranty is expressed in lieu of all other warranties, expressed or implied, including the implied warranty of fitness for a particular purpose, the implied warranty of merchantability or noninfri ngement and of all other obligations or liabilities on spansion's part, and it neither assumes nor authorizes any other person to assume for spansion any other liabilities. the foregoing constitutes the buyer's sole and exclusive remedy for the furnishing of defective or non conforming known good die or known good wafer(s) an d spansion shall not in any ev ent be liable for increased manufacturing costs, downtime costs, damages relating to buyer's procurement of substitute die or wafer(s) (i .e., ?cost of cover?), loss of profits, revenues or goodwill, loss of use of ordamage to any associated equipment, or any other indirect, incidental, special or consequential damage s by reason of the fact that such known good die or known good wafer(s) shall have been determined to be defective or non conforming. buyer agrees that it will make no warranty representatio ns to its customers which exceed those given by spansion to buyer unless and until buyer shall agree to indemnify spansion in writing for any claims which exceed spansion's limited warranty. known good die or known good wafer(s) are not designed or authorized for use as components in life support appli ances, devices or systems wher e malfunction of the die or wafer(s) can reasonably be expected to result in a personal injury. buyer's use of known good die or known good wafer(s) for use in life support applications is at buyer's own risk and buyer agrees to fully indemnify spansion for any damages resulting in such use or sale. known good die or known good wafer are not designed or authorized for use as components in life support appliances, devices or systems where malf unction of the die or wafer can re asonably be expected to result in a personal injury. buyer's use of known good die or know n good wafer for use in life support applications is at buyer's own risk and buyer agrees to fully indemnify spansion for any damages resulting in such use or sale.
february 27, 2009 s29al008d_kgd_sp_a6 s29al008d known good die 11 supplement 13. revision history section description revision a (november 23, 2004) initial release. revision a1 (april 29, 2005) die photograph & pad locations added pad numbers to drawing pad description pads relative to vcc: corrected pad number column revision a2 (may 19, 2005) ordering information added two types of device carriers, reel and tape; and tray stack added package type valid combination table added new package type nomenclature revision a3 (june 22, 2005) ordering information added commercial and industrial values to temperature range. added additiional package type/temperature range values to valid combinations tables. dc operating conditions repaired temperature settings revision a4 (february 9, 2007) manufacturing information changed test location to penang, malaysia revision a5 (july 17, 2007) ordering information modified temperature range options valid combinations table modified options packaging information removed references to gel-pak revision a6 (february 27, 2009) global added obsolescence information to distinctive char acteristics and ordering information sections of data sheet.
12 s29al008d known good die s29al008d_kgd_sp_a6 february 27, 2009 supplement colophon the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limitation, ordinary industrial use, genera l office use, personal use, and household use, but are not designed, developed and m anufactured as contemplated (1) for any use that includes fatal risks or dangers t hat, unless extremely high safety is secured, could have a s erious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic contro l, mass transport control, medical life support system, missile launch control in we apon system), or (2) for any use where chance of failure is intole rable (i.e., submersible repeater and artifi cial satellite). please note that spansion will not be liable to you and/or any third party for any claims or damages arising in connection with abo ve-mentioned uses of the products. any semic onductor devices have an inherent chance of failure. you must protect agains t injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. if any products described in this document r epresent goods or technologies s ubject to certain restriction s on export under the foreign exchange and foreign trade law of japan, the us export ad ministration regulations or the applicable laws of any oth er country, the prior authorization by the respective government entity will be required for export of those products. trademarks and notice the contents of this document are subjec t to change without notice. this document ma y contain information on a spansion product under development by spansion. spansion reserves the right to change or discontinue work on any product without notice. the informati on in this document is provided as is without warran ty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. spansion assume s no liability for any damages of any kind arising out of the use of the information in this document. copyright ? 2004-2009 spansion inc. all rights reserved. spansion ? , the spansion logo, mirrorbit ? , mirrorbit ? eclipse ? , ornand ? , ornand2 ? , hd-sim ? , ecoram ? and combinations thereof, are tradem arks of spansion llc in the us and other countries. other names used are for informational purposes only and ma y be trademarks of their respective owners.


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